Liquid crystal display

ABSTRACT

An LCD includes a liquid crystal panel having a TFT substrate, a CF substrate, and a liquid crystal layer interposed between the two substrates; a TFT ambient light photosensor having a semiconductor layer for detecting external light; a photodetector unit having a capacitor in which a predetermined reference voltage is charged and a voltage charged by leakage current of the TFT ambient light photosensor is lowered; and an ambient light photosensor reader unit for reading a voltage charged in the capacitor for a predetermined read period. The photodetector unit is disposed on a first surface of the TFT substrate that is in contact with the liquid crystal layer, and the surface of the photodetector unit except for the semiconductor layer and its periphery is covered by a light-shielding layer. Malfunction or reduced sensitivity of an ambient light photosensor due to light from backlights is prevented with a simple structure.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No.11/730,257, filed Mar. 30, 2007, which claims priority to JapanesePriority Patent Application JP 2006-101622 filed in the Japan PatentOffice on Apr. 3, 2006, the entire content of each of which is herebyincorporated by reference.

BACKGROUND

1. Technical Field

The present invention relates to a liquid crystal display, particularlyto a liquid crystal display that has a light source, such as a backlightand a front light, whose brightness level can be automatically changeddepending on the brightness of external light.

2. Related Art

The use of liquid crystal displays (LCDs) has been widespread not onlyfor information and communications devices but also for general electricappliances. Among them, reflective LCDs that require no back or sidelights (hereinafter collectively referred to as “backlights”), unliketransmissive LCDs, have been widely used for mobile applications inorder to reduce power consumption. Since the reflective LCDs useexternal light as their light source, they present poor displayvisibility in a dark room. To address this problem, there have beendeveloped reflective LCDs employing front lights (e.g., seeJP-A-2002-131742) and semi-transmissive LCDs having a combination ofcharacteristics of transmissive and reflective LCDs (e.g., seeJP-A-2001-350158). For example, reflective LCDs employing front lightsdisplay images by turning on their front lights in dark places and byusing external light without using the front lights in bright places.There is no need to keep the front lights on, whereby power consumptioncan be significantly low. Semi-transmissive LCDs have a transmissivepart with a transmissive electrode and a reflective part with areflective electrode in each of their pixels. They display images byusing the transmissive part in each pixel with their backlights turnedon in dark places and by using the reflective part bringing in externallight without turning on the backlights in bright places. There is againno need to keep the backlights on, whereby power consumption can besignificantly cut down.

Such reflective LCDs and semi-transmissive LCDs have variable visibilitydepending on the intensity of external light. To ensure a highly visibledisplay, the end user needs to take the trouble to turn on or off thebacklights or lower the light level after deciding whether to turn onthe backlights according to the intensity of external light. Here, theend user may unnecessarily turn on the backlights even when sufficientexternal light is available. When this happens, waste power consumptionincreases to cause quick battery drain in cellular phones and othermobile appliances.

To solve this problem, some related art examples have been developed inwhich an ambient light photo sensor is provided to a LCD in order todetect the intensity of external light and control on/off of thebacklights according to the detection results.

For example, the LCD described in JP-A-2002-131719 includes aphotodetector unit having a thin-film transistor (TFT) as an ambientlight photosensor on a LCD panel substrate. The TFT ambient light photosensor is manufactured together with another TFT serving as a switchingelement for the panel. By detecting photo-leakage current from the TFTambient light photosensor, the LCD automatically turns on/off itsbacklight depending on the brightness of the surroundings. A LCDdescribed in JP-A-2003-215534 includes a photodiode as an ambient lightphotosensor, and a light-emitting diode as a backlight provided withtemperature-compensated current depending on the brightness of thesurroundings. JP-A-2004-007237 describes a light-emitting diodefunctioning as both a backlight and a device-operation indicator and anambient light photosensor, whereby the backlight is controlled on/offbased on the electromotive force of the diode depending on thebrightness of the surroundings.

However, the LCD including a TFT ambient light photosensor integrally onits substrate as described in JP-A-2002-131719 may cause malfunction orreduced sensitivity under the influence of light emitted from thebacklights. FIG. 12 is a sectional view schematically showing a TFTambient light photosensor included in a known LCD. Referring to thedrawing, the TFT ambient light photosensor includes a gate electrodeG_(L), a source electrode S_(L), a drain electrode D_(L), and asemiconductor layer 19 _(L) made of amorphous silicon, for example.Provided on an active matrix substrate 2, the TFT ambient lightphotosensor detects light L1 incident from a display surface through acolor filter substrate 25. The drawing also shows a capacitor C.

However, positioning of the TFT ambient light photosensor in this mannermay generate light L₂ incident on the semiconductor layer 19 _(L), alongwith the light L₁ incident from the display surface. This is becauselight emitted from a backlight BL is reflected on a layer 27, includinga color filter and a black matrix, between a color filter substrate 25and a common electrode 26. When the light L₂ comes in, an extra darkcurrent flows in the TFT ambient light photosensor, thereby causingmalfunction or reduced sensitivity of the TFT ambient light photosensor.

SUMMARY

An advantage of the invention is to provide an LCD having a simplestructure to incorporate an ambient light photosensor detecting externallight in a substrate to avoid malfunction and reduced sensitivity due tolight from its backlights.

Another advantage of the invention is to provide an LCD thatautomatically controls on/off of its backlights not only at apredetermined level of brightness but also at brightness levels desiredby end users.

A liquid crystal display (LCD) according to a first aspect of thepresent invention includes a liquid crystal panel having an activematrix substrate, a opposed substrate, and a liquid crystal layerinterposed between the two substrates; an ambient light photosensorhaving a semiconductor layer for detecting external light; aphotodetector unit having a first capacitor in which a predeterminedreference voltage is charged and a voltage charged by leakage current ofthe ambient light photosensor is lowered; and an ambient lightphotosensor reader unit for reading a voltage charged in the firstcapacitor for a predetermined read period. The photodetector unit isdisposed on a surface of the active matrix substrate that is in contactwith the liquid crystal layer, and the surface of the photodetector unitexcept for the semiconductor layer and its periphery is covered by alight-shielding layer.

Since the surface of the photodetector unit provided to the activematrix substrate except for the semiconductor layer that detectsexternal light and its periphery included in the ambient lightphotosensor is covered by a light-shielding layer, light from thebacklight that has passed through the active matrix substrate and beenreflected on a opposed substrate or the like can be prevented fromentering the ambient light photosensor. It is therefore possible toprevent malfunction or reduced sensitivity of the ambient lightphotosensor. This feature is achieved with a simple structure in whichthe photodetector is simply covered.

In the above-described LCD, preferably, the photodetector unit and theambient light photosensor reader unit are provided to the surface of theactive matrix substrate that is in contact with the liquid crystallayer. In the photodetector unit and the ambient light photosensorreader unit, the surface of the photodetector unit except for thesemiconductor layer that detects external light and its periphery iscovered by a light-shielding layer.

Since the ambient light photosensor reader unit as well as thephotodetector unit is provided to the active matrix substrate, theambient light photosensor reader unit is also provided with thelight-shielding layer in addition to the above-mentioned advantage. Itis therefore possible to easily shield the ambient light photosensorreader unit from light.

In the above-described LCD, preferably, the light-shielding layer ismade of a resin material containing a light-shielding material.

Since the light-shielding layer is made of a light-shielding materialthat shields light, such as a resin material in which carbon or titaniumis dispersed in a photoresist, the light from the backlight is preventedfrom being reflected on a lower portion of the light-shielding layer,and then passing through an insulating layer or the like of the activematrix substrate to enter the ambient light photosensor. It is thereforepossible to further prevent malfunction or reduced sensitivity of theambient light photosensor.

In the above-described LCD, preferably, the ambient light photosensor ofthe photodetector unit is a thin-film transistor (TFT) that ismanufactured together with another TFT serving as a switching elementfor the liquid crystal panel in a process for manufacturing the activematrix substrate.

Since the TFT as the ambient light photosensor is manufactured togetherwith another TFT serving as a switching element for the active matrixsubstrate, there is no need to increase a manufacturing process forproviding the ambient light photosensor.

The above-described LCD, preferably, also includes an illuminating unitfor illuminating the liquid crystal panel, and a controller unit forcontrolling the illuminating unit in accordance with an output from theambient light photosensor reader unit. The controller unit includes athreshold memory and a comparator. In normal operation mode, thecomparator compares an output from the photodetector unit and athreshold stored in the threshold memory, and a comparison result isused for controlling on/off of the illuminating unit. In default mode,the ambient light photosensor is irradiated with reference light, and anoutput from the photodetector unit is stored in the threshold memory.

Since the LCD also includes an illuminating unit, such as the backlight,and a controller, a reference threshold for on/off control of theilluminating unit can be modified by irradiating the ambient lightphotosensor with reference light in default mode even when there arevariations in the ambient light photosensor's characteristics. It istherefore possible to automatically control on/off of the illuminatingunit at a precisely predetermined level of brightness. Moreover, sincethis structure allows end users to select desired levels of brightnessfor the reference light, it is possible to automatically turn on/off thebacklight etc. in accordance with brightness levels desired by endusers.

In the above-described LCD, preferably, the liquid crystal panel is atransmissive LCD panel or a semi-transmissive LCD panel.

Accordingly, the above-described advantages are applicable to atransmissive or semi-transmissive LCD.

Additional features and advantages are described herein, and will beapparent from the following Detailed Description and the figures.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 shows an example of the voltage-current curve of a TFT ambientlight photosensor.

FIG. 2 is a circuit diagram of a photodetector unit using the TFTambient light photosensor.

FIG. 3 shows the voltage-time curve at both ends of a capacitor includedin the circuit diagram of FIG. 2 with different brightness levels.

FIG. 4 is a plan view schematically showing an active matrix substrateseen through a color filter substrate included in a liquid crystaldisplay (LCD) according to an embodiment of the invention.

FIG. 5 is a sectional view along line X-X of FIG. 4.

FIG. 6 is a plan view showing a single pixel seen through a color filtersubstrate included in a semi-transmissive LCD.

FIG. 7 is a sectional view along line A-A of FIG. 6, with the colorfilter substrate included.

FIG. 8 is a sectional view showing an ambient light photosensor and aswitching element on a thin-film transistor (TFT) substrate.

FIG. 9 is a circuit diagram showing a photodetector unit and an ambientlight photosensor reader unit.

FIG. 10 is a timing chart showing output waveforms of the componentsshown in FIG. 9.

FIG. 11 is a block diagram of a controller.

FIG. 12 is a sectional view schematically showing a TFT ambient lightphotosensor included in a known LCD.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Preferred embodiments of the invention will be now described withreference to the accompanying drawings. It should be noted that thedescription below is given to illustrate a semi-transmissive LCD as anexample of an LCD to embody the technical concept of the invention, andis not intended to limit the invention. Various changes andmodifications can be made without departing from the spirit and scope ofthe claims appended hereto.

First Embodiment

Referring to FIGS. 1 through 3, the known operation principle of a TFTas an ambient light photosensor (hereinafter referred to as the “TFTambient light photosensor”) and a driving circuit therefor will bedescribed. FIG. 1 shows an example of the voltage-current curve of theTFT ambient light photosensor. FIG. 2 is a circuit diagram of aphotodetector unit using the TFT ambient light photosensor. FIG. 3 showsthe voltage-time curve at both ends of a capacitor C included in thecircuit diagram of FIG. 2 with different brightness levels. Likereference numerals in FIG. 2 designate like structural elements.

The TFT ambient light photosensor has practically the same structure asanother TFT serving as a switching element for an active-matrix LCDpanel. Referring to FIG. 1, an ultra-low dark current flows in the TFTambient light photosensor in the gate-off state when it islight-shielded, and a leakage current increases depending on theintensity (brightness) of light shed on the channel region. Referring tothe circuit diagram of a photodetector unit LS in FIG. 2, a constantreverse bias voltage (e.g. −10 V) is applied to the gate electrode G_(L)of the TFT ambient light photosensor to turn it into the gate-off state,a capacitor C is coupled in parallel between the drain electrode D_(L)and the source electrode S_(L), and a constant reference voltage V_(S)(e.g. +2 V) is applied to both ends of the capacitor C with a switchingelement SW turned on. Subsequently, when the switching element SW isturned off, the voltage on both ends of the capacitor C decreases astime passes depending on the brightness of the surroundings of the TFTambient light photosensor as shown in FIG. 3. Accordingly, since thevoltage on both ends of the capacitor C is inversely proportional to thesurrounding brightness of the TFT ambient light photosensor, thesurrounding brightness is calculated by measuring the voltage after apredetermined time period to after the switching element SW is turnedoff.

Referring next to FIGS. 4 and 5, a semi-transmissive LCD in which theambient light photosensor according to the present embodiment isincorporated will be described. FIG. 4 is a plan view schematicallyshowing an active matrix substrate seen through a color filter substrateincluded in the LCD. FIG. 5 is a sectional view along line V-V of FIG.4.

Referring to FIG. 5, the LCD 1 includes an active matrix substrate(referred to as the “TFT substrate”) 2, a color filter substrate(referred to as the “CF substrate”) 25, and a liquid crystal layer 14interposed between the two substrates. The TFT substrate 2 is made of atransparent insulating material, such as a glass substrate, and providedwith a TFT, for example, on its surface. The CF substrate 25 is providedwith a color filter, for example, on its surface.

The TFT substrate 2 is provided in its display area DA with gate lines 4and source lines 5 forming a matrix. As shown in FIG. 7, a pixelelectrode 12 is provided in an area between one gate line 4 and onesource line 5, and a TFT serving as a switching element is provided andcoupled to an intersection of the gate line 4 and source line 5.Provided on an outer rim within the display area DA is a photodetectorunit LS1. The TFT, pixel electrode, and wiring therefor areschematically shown as a first structure 3 in FIG. 5, and their detailedstructure will be later described with reference to FIGS. 6 to 8.

Referring to FIG. 4, the TFT substrate 2 on its shorter side has aflexible wiring substrate FPC to be coupled to an image supply device(not shown) to drive the LCD 1. The flexible wiring substrate FPCcouples data lines and control lines from the image supply device to adriver IC. The driver IC generates VCOM signals, source signals, andgate signals, for example, for driving liquid crystal to be supplied toa common line 11, the source line 5, and the gate line 4, respectively,on the TFT substrate 2.

Provided on the four corners of the TFT substrate 2 are a plurality oftransfer electrodes 10 ₁ to 10 ₄. These electrodes 10 ₁ to 10 ₄ arecoupled to each other directly through the common line 11 or within thedriver IC to have an equal potential. Each of the electrodes 10 ₁ to 10₄ is electrically coupled to a common electrode 26, which will bedescribed later. The common electrode 26 is applied with a commonelectrode voltage output from the driver IC.

The CF substrate 25 is provided with a plurality of color filters, forexample, red (R), green (G), and blue (B) filters, and a black matrix ona glass plate. The CF substrate 25 is positioned face to face with theTFT substrate 2. The black matrix is positioned at least correspondingto the gate and source lines of the TFT substrate 2. The black matrixdefines the areas in which the color filters are provided. The colorfilters and the like are not shown in detail and are schematically shownas a second structure 27 in FIG. 5. The CF substrate 25 is also providedwith a common electrode 26 that is a transparent electrode made ofindium oxide or tin oxide, for example. This common electrode 26 isextended to a position facing the photodetector unit LS1 provided to theTFT substrate 2 as shown in FIG. 5.

The TFT substrate 2 and CF substrate 25 are positioned face to face andcoupled to each other with a gap for having the liquid crystal layer 14therebetween. A sealing agent 6 is used to prevent the liquid crystalfrom falling from the gap between the two substrates.

The sealing agent 6 is applied to the periphery of the display area DAof the TFT substrate 2 except for an inlet (not shown). The sealingagent 6 is made by, for example, mixing thermosetting resin, such asepoxy resin, and an insulating particulate filler. A contact material 10a for coupling the two substrates is made of, for example, metal-platedconductive particles and thermosetting resin.

The two substrates 2 and 25 are stuck together in the following manner.The TFT substrate 2 is first mounted on a first dispenser to apply thesealing agent 6 thereto in a predetermined pattern, and is then mountedon a second dispenser to apply the contact material 10 a on the transferelectrodes 10 ₁ to 10 ₄. Then, a spacer 15 is evenly applied to thedisplay area DA of the TFT substrate 2, and an adhesive for temporarybonding is applied to an area of the CF substrate 25 that is in contactwith the sealing agent 6 and the contact material 10 a. Subsequently,the TFT substrate 2 and CF substrate 25 are stuck together and theadhesive is hardened, which completes temporary bonding. The temporarilybonded substrates 2 and 25 are thermally treated with pressure to hardenthe thermosetting resin of the sealing agent 6 and of the contactmaterial 10 a, thereby completing a hollow LCD panel. Next, liquidcrystal 14 is injected into this hollow panel through an inlet (notshown) and thereafter the inlet is sealed with a sealant, whichcompletes a semi-transmissive LCD panel. To assemble this LCD panel, abacklight BL is also provided below (back of) the panel, namely, the TFTsubstrate 2.

Referring now to FIGS. 6 to 8, the pixel structure of this LCD will bedescribed. FIG. 6 is a plan view showing a single pixel seen through theCF substrate included in the LCD. FIG. 7 is a sectional view along lineA-A of FIG. 6, with the CF substrate included. FIG. 8 is a sectionalview showing an ambient light photosensor and a switching element on theTFT substrate.

On the display area DA of the TFT substrate 2, a plurality of gate lines4 made of metal, such as aluminum or molybdenum, are aligned in parallelat regular intervals. Provided to the center or nearly the centerbetween two adjacent gate lines 4 in parallel with them is an auxiliarycapacitance line 16. From each gate line 4, the gate electrode G of theTFT is extended. Also on the TFT substrate 2, a gate insulator 17, forexample, made of silicon nitride or silicon oxide, is deposited to coverthe gate line 4, auxiliary capacitance line 16, and gate electrode G.Provided on the gate electrode G is a semiconductor layer 19, forexample, made of amorphous silicon or polysilicon, with the gateinsulator 17 therebetween. On top of the gate insulator 17, a pluralityof source lines 5 made of metal, such as aluminum or molybdenum, areprovided in a direction perpendicular to the gate lines 4. From eachsource line 5, the source electrode S of the TFT is extended so as to bein contact with the semiconductor layer 19. Furthermore, the drainelectrode D of the TFT made together with and of the same material asthe source lines 5 and source electrode S is provided on the gateinsulator 17. The drain electrode D is also made in contact with thesemiconductor layer 19.

Two adjacent gate lines 4 and two adjacent source lines 5 define pixelareas. Each pixel has a TFT serving as a switching element having thegate electrode G, gate insulator 17, semiconductor layer 19, sourceelectrode S, and drain electrode D. Here, the drain electrode D andauxiliary capacitance line 16 constitute an auxiliary capacitance forthe pixel.

A protective insulator 18, for example, made of an inorganic insulatingmaterial, is further deposited to cover the source line 5, TFT, and gateinsulator 17. On top of the protective insulator 18, an interlayer 20made of an organic insulator is deposited. The surface of thisinterlayer 20 has a reflective part R having a finely protruded andrecessed surface and a flat transmissive part T. Therefore, externallight incident through the CF substrate 25 is reflected on thereflective part R, while light from the backlight BL is transmittedthrough the transmissive part T. The protruded and recessed surface inthe reflective part R of the interlayer 20 is not shown in FIG. 7. At aposition corresponding to the TFT drain electrode D, a contact hole 13is formed through the protective insulator 18 and interlayer 20.Provided above the contact hole 13 and a part of the surface of theinterlayer 20 in the reflective part R of each pixel is a reflectiveelectrode R₀, for example, made of aluminum metal. Provided on thesurface of the reflective electrode R₀ and of the interlayer 20 in thetransmissive part T is a pixel electrode 12, for example, made of indiumtin oxide (ITO).

Provided on the TFT substrate 2 are a TFT ambient light photosensor anda switching element SW1 both of which include TFT. Specifically, asshown in FIG. 8, the gate electrode GL of the TFT ambient lightphotosensor, a first terminal C₁ of a capacitor Cw, and the gateelectrode G_(S) of the TFT serving as the switching element SW1 (alsoreferred to as the “TFT switching element”) are provided on the TFTsubstrate 2. The gate insulator 17, made of silicon nitride, siliconoxide, or the like, is deposited to cover the surface of these elements.Provided on the gate electrode G_(L) of the TFT ambient lightphotosensor and the gate electrode G_(S) of the TFT switching elementSW1 are semiconductor layers 19 _(L) and 19 _(S), respectively, made ofamorphous silicon or polysilicon, for example, with the gate insulator17 therebetween. On top of the gate insulator 17, the source electrodeS_(L) and drain electrode D_(L), made of metal, such as aluminum ormolybdenum, of the TFT ambient light photosensor and the sourceelectrode S_(S) and drain electrode D_(S) of the TFT switching elementSW1 are provided so as to be in contact with the semiconductor layers 19_(L) and 19 _(S), respectively. The source electrode S_(L) of the TFTambient light photosensor and the drain electrode D_(S) of the TFTswitching element SW1 are extended and coupled to each other at an areaserving as a second terminal C₂ of the capacitor Cw. Furthermore, theprotective insulator 18, for example, made of an inorganic insulatingmaterial, is deposited to cover the surface of the TFT ambient lightphotosensor, capacitor Cw, and TFT switching element SW1.

The surface of the protective insulator 18 is covered with alight-shielding thin film 21 except for the light-sensitive part, namelythe semiconductor layer 19 _(L), of the TFT ambient light photosensorand its periphery. The light-shielding thin film (layer) 21 is made ofmetal chromium used for the black matrix, resin black in which carbon ortitanium is dispersed in a photoresist, or a metal material, such asnickel. The film can instead have a low reflecting, two-layeredstructure of metal chromium and chromium oxide.

Since the surface in the photodetector unit LS1 is covered with thelight-shielding film (layer) except for the semiconductor layer 19 _(L)of the TFT ambient light photosensor and its periphery, no externallight enters the switching element SW1, and no light from the backlightBL reflected on the black matrix in the CF substrate, for example,enters the TFT ambient light photosensor. This structure thereforeprevents malfunction or reduced sensitivity of the ambient lightphotosensor. Also, light shielding can be implemented simply by coveringthe photodetector unit.

If the light-shielding layer 21 is made of a resin material in whichcarbon or titanium is dispersed in a photoresist, for example, the lightfrom the backlight is prevented from being reflected on a lower portionof the light-shielding layer, and then passing through an insulatinglayer or the like provided to the active matrix substrate to enter theambient light photosensor. It is therefore possible to further preventmalfunction or reduced sensitivity of the ambient light photosensor. Onthe side of the CF substrate 25 provided face to face with the surfaceprovided with the photodetector unit LS1, the common electrode 26 isextended to the position facing the photodetector unit LS1. The drainelectrode D_(L) of the TFT ambient light photosensor included in thephotodetector unit LS1 and the second terminal C₂ of the capacitor Cw ona ground terminal GR side are coupled to the common electrode 26 with atransfer electrode 10 ₂ therebetween (see FIG. 5).

Referring next to FIGS. 9 and 10, the structures and operations of thephotodetector unit LS1 and an ambient light photosensor reader unit Re1will be described. FIG. 9 is a circuit diagram showing the photodetectorunit and ambient light photosensor reader unit. FIG. 10 is a timingchart showing output waveforms of the components shown in FIG. 9.

Referring to FIG. 9, the photodetector unit LS1 includes the drainelectrode D_(L) and source electrode S_(L) of the TFT ambient lightphotosensor and the capacitor Cw provided in parallel between the twoelectrodes. The source electrode S_(L) and a first terminal of thecapacitor Cw are coupled to a reference voltage source via the switchingelement SW1. The drain electrode D_(L) of the TFT ambient lightphotosensor and a second terminal of the capacitor Cw are coupled to acommon electrode (VCOM). The ambient light photosensor reader unit Re1is a publicly known sampling hold circuit SH including a holdingcapacitor Cr that stores the charge of the capacitor Cw included in thephotodetector unit LS1, an OP. amplifier that amplifies the outputvoltage from the holding capacitor Cr, and an A/D converter thatconverts analog output from the OP. amplifier into digital data. Thephotodetector unit LS1 and ambient light photosensor reader unit Re1 arecoupled via a switching element SW3. The holding capacitor Cr has alarger capacity than that of the capacitor Cw. While the photodetectorunit LS₁ and ambient light photosensor reader unit Re1 are provided tothe outer peripheral rim of the display area DA of the TFT substrate 2in the present embodiment, the photodetector unit LS1 particularly maybe provided to the inner peripheral rim of the display area DA.

The operations of the photodetector unit LS1 and ambient lightphotosensor reader unit Re1 will now be described.

The common electrode 26 of the LCD panel is applied with a commonelectrode voltage VCOM having a predetermined amplitude. In FIG. 10,VCOMH indicates a high-level voltage and VCOML indicates a low-levelvoltage. The TFT ambient light photosensor and capacitor Cw are alsoapplied with the voltage VCOM. In addition, the gate electrode G_(L) ofthe TFT ambient light photosensor is applied with a predeterminednegative voltage GV in sync with the voltage VCOM. The voltage GV hasthe same amplitude as the voltage VCOM, and is consistently lower thanthe voltage VCOM by a predetermined reverse bias voltage, e.g., 10 V. Inother words, the high-level voltage GVH of the voltage GV is calculatedby subtracting 10 V from the voltage VCOMH, and the low-level voltageGVL by subtracting 10 V from the voltage VCOML.

By controlling the switching element SW1 for predetermined frameperiods, for example, for ODD and EVEN frame periods under this state,the photodetector unit LS1 is applied with a predetermined referencevoltage Vs from the reference voltage source. For example, the switchingelement SW1 is turned on in the VCOML period in an ODD frame period,whereby the capacitor Cw is applied with the reference voltage Vs andcharged. Through this charging, a potential difference Va between thereference voltage Vs and voltage VCOML is applied to both ends of thecapacitor Cw for charging. However, the voltage difference decreases dueto a leak current caused by light incident to the TFT ambient lightphotosensor if the switching element SW1 is turned off, since the gateelectrode G_(L) is gated off with the voltage GVL applied. In the VCOMLperiod in the same ODD frame period, the switching element SW3 is turnedon, whereby the charge of the capacitor Cw is shifted to the holdingcapacitor Cr for charging. In a similar manner, the switching elementSW1 is turned on again in the VCOML period in the next ODD frame period,thereby charging the capacitor Cw with the reference voltage Vs, turningoff the switching element SW1 and instead turning on the switchingelement SW3, and shifting the charge of the capacitor Cw to the holdingcapacitor Cr for charging. Subsequently, on/off switching of theswitching elements SW1 and SW3 is repeated in a similar manner, wherebythe holding capacitor Cr is charged with the voltage accumulated in thecapacitor Cw. By repeating on/off switching of the switching elementsSW1 and SW3, the voltage of the holding capacitor Cr accumulated for aplurality of frame periods is detected for photodetection. Thus, even ifthe voltage accumulated in the capacitor Cw during one frame periodvaries depending on instantaneous changes in the amount of light, noise,or other factors, there are no large effects on the voltage accumulatedin the holding capacitor Cr. It is therefore possible to provide stablephotodetection results. While the switching element SW1 in thephotodetector unit LS1 is turned on in the VCOML period forphotodetection, it may be turned on in the VCOMH period to achieve thesame detection results. In addition, while no on/off switching of theswitching elements SW1 and SW3 is performed in EVEN frames in thisexample, it may be in EVEN frames.

Thus, the voltage accumulated in the holding capacitor Cr in apredetermined frame period is input and amplified in the OP amplifierand is analog/digital converted to produce a read output P.

The output P from the ambient light photosensor reader unit Re1 is inputto a controller unit 1A so as to control on/off of an illuminating unit.FIG. 11 is a block diagram of the controller.

The output from the ambient light photosensor reader unit Re1 isprocessed by a sensor controller 30 and input to one terminal of acomparator 33, and is also input to a mode controller 31. The modecontroller 31 switches normal and default operation modes in response tosignals input from outside. In default mode, outputs from the sensorcontroller 30 are input and stored in a threshold memory 32. In normaloperation mode, outputs from the sensor controller 30 are blocked so asnot to be input in the threshold memory 32, while the threshold storedin the threshold memory 32 is output to the other terminal of thecomparator 33.

In normal operation mode, the comparator 33 compares input signals fromthe sensor controller 30 and from the threshold memory 32. When a signalinput from the controller 30 is larger (brighter) than the thresholdstored in the memory 32, backlights 35 (illuminating unit) are turnedoff via a switch 34. On the contrary, when a signal input from thecontroller 30 is smaller (darker) than the threshold stored in thememory 32, the backlights 35 are turned on via the switch 34.

When the default mode is selected in the mode controller 31, outputsfrom the sensor controller 30 are stored in the threshold memory 32.Accordingly, by exposing the TFT ambient light photosensor to light ofpredetermined brightness, the threshold for this brightness level isstored. Therefore, even if the TFT ambient light photosensor hasvariations in photoelectric characteristics, it is possible to controlon/off of the backlights accurately with a predetermined brightnessthreshold.

In this case, the predetermined brightness of light may be fixed in amanufacturing process, or may be set by the end user so that on/off ofthe backlights can be automatically controlled at a desirable level. Thecomparator 33 may have hysteresis characteristics for setting differentbrightness levels for turning on and off the backlights so as not tofrequently control on/off of the backlights. The hysteresischaracteristics are easily available by using a hysteresis comparator asthe comparator 33.

The number of the TFT ambient light photosensor used in the presentembodiment is not limited to one, and a plurality of ambient lightphotosensors may be used. For example, an average of outputs from aplurality of ambient light photosensors or a difference between outputsfrom a light-shielded TFT ambient light photosensor (dark-fieldreference) and from an unshielded TFT ambient light photosensor may beused, thereby improving brightness measurement accuracy.

The sensor controller 30, mode controller 31, threshold memory 32,comparator 33, and switch 34 according to the present embodiment may beincorporated into the driver IC in the LCD. The threshold memory 32 maynot be provided inside the LCD 1 as long as an external host computerhaving the threshold memory 32 is configured to initialize the LCD 1when starting up the LCD 1.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A liquid crystal display comprising: a liquidcrystal panel including an active matrix substrate, an opposedsubstrate, and a liquid crystal layer interposed between the twosubstrates; a photodetector unit including: an ambient light photosensorhaving a semiconductor layer for detecting external light, a firstcapacitor electrically connected to the ambient light photosensor, acharged voltage on the first capacitor being lowered by leakage currentcaused by ambient light, and a switching element for charging apredetermined reference voltage on the first capacitor while theswitching element is turned on; and an ambient light photosensor readerunit for reading the charged voltage on the first capacitor, wherein thephotodetector unit is disposed on a first surface of the active matrixsubstrate that is in contact with the liquid crystal layer, theswitching element is provided in a region other than the ambient lightphotosensor and the ambient light photosensor reader unit, the firstcapacitor and the switching element in the photodetector unit areentirely covered by the light-shielding layer formed between the liquidcrystal layer and the first capacitor, and an ambient brightness isdetected by reading the voltage charged on the first capacitor at a timewhen a predetermined time period has been elapsed after the switchingelement is turned off.
 2. The liquid crystal display according to claim1, wherein the light-shielding layer is made of a resin materialcontaining a light-shielding material that shields light.
 3. The liquidcrystal display according to claim 1, wherein the ambient lightphotosensor is a thin-film transistor that is manufactured together withanother thin-film transistor serving as the switching element in aprocess for manufacturing the active matrix substrate.
 4. The liquidcrystal display according to claim 1, further comprising: anilluminating unit for illuminating the liquid crystal panel; and acontroller unit for controlling the illuminating unit in accordance withan output from the ambient light photosensor reader unit; the controllerunit including a threshold memory and a comparator, in normal operationmode, the comparator comparing an output from the photodetector unit anda threshold stored in the threshold memory, and a comparison resultbeing used for controlling on/off of the illuminating unit, and indefault mode, the ambient light photosensor being irradiated withreference light, and an output from the photodetector unit being storedin the threshold memory.
 5. The liquid crystal display according toclaim 1, wherein the liquid crystal panel is one of a transmissiveliquid crystal display panel and a semi-transmissive liquid crystaldisplay panel.